Question

这是我在这里发表的第一篇文章，如果格式错误或遗漏，请对不起。根据我们大学here和here的建议，我成功地编写和阅读了STM32F4 Discovery的闪存（两篇文章都用同样的方式解释）：

__attribute__((__section__(".user_data"))) const char userConfig[64];
[...]
void Write_Flash(uint8_t data)
{
     HAL_FLASH_Unlock();
     __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR );
     FLASH_Erase_Sector(FLASH_SECTOR_6, VOLTAGE_RANGE_3);
     HAL_FLASH_Program(TYPEPROGRAM_WORD, &userConfig[0], data);
     HAL_FLASH_Lock();
}
[...]
  dataSize=(sizeof dataBuffer) / (sizeof *dataBuffer);
  for (i=0;i<dataSize;i++) {
      dataBuffer[i]=i+1;
  }
  Write_Flash(dataBuffer[0]);

上面的代码工作正常，并将1写入userConfig[0]。从这一点来说，我有以下问题。我只能在闪存中写一个字节，不知道如何写更多。我试图更改HAL_FLASH_Program(TYPEPROGRAM_WORD, &userConfig[0], data);的地址，但仅适用于&userConfig[0] 这是我尝试写几个字节但没有成功：

__attribute__((__section__(".user_data"))) const char userConfig[64];
[...]
void Write_Flash(uint8_t data, uint8_t i)
    {
         HAL_FLASH_Unlock();
         __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR );
         FLASH_Erase_Sector(FLASH_SECTOR_6, VOLTAGE_RANGE_3);
         HAL_FLASH_Program(TYPEPROGRAM_WORD, &userConfig[i], data);
         HAL_FLASH_Lock();
    }
[...]
dataSize=(sizeof dataBuffer) / (sizeof *dataBuffer);
for (i=0;i<dataSize;i++) {
      dataBuffer[i]=i+1;
      Write_Flash(dataBuffer[i],i);
  }

提前感谢您的帮助。

Answer 1

感谢@phyloflash我得到了答案。当您调用HAL_FLASH_Program时，您需要指定要写入的数据的大小以及该数据的第一个字节的地址。在我的例子中，HAL_FLASH_Program(TYPEPROGRAM_WORD, &userConfig[0], data);一个字意味着4个字节，因此userConfig的前4个字节被写入。这也意味着定义为uint8_t data的参数必须与您要写入的数据大小一致，因此它应该是uint32_t data。

我修改了代码以考虑这些注意事项。以下代码已经证明并正在运行：

//data type have to be consistent with the TYPEPROGRAM, i.e:
//TYPEPROGRAM_BYTE uint8_t data
//TYPEPROGRAM_HALFWORD uint16_t data
//TYPEPROGRAM_WORD uint32_t data
//TYPEPROGRAM_DOUBLEWORD uint64_t data
void Write_Flash(uint32_t data[],uint8_t flashTypeProgram)

{
     uint8_t addressGap;
     HAL_FLASH_Unlock();
     __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGSERR );
     FLASH_Erase_Sector(FLASH_SECTOR_6, VOLTAGE_RANGE_3);
     for (i=0;i<64/pow(2, flashTypeProgram);i++)
     {
         addressGap=pow(2, flashTypeProgram)*i;
         HAL_FLASH_Program(flashTypeProgram, &userConfig[0]+addressGap, data[i]);
     }
     HAL_FLASH_Lock();
     //TYPEPROGRAM_BYTE        Program byte (8-bit) at a specified address              $0
     //TYPEPROGRAM_HALFWORD    Program a half-word (16-bit) at a specified address      $1
     //TYPEPROGRAM_WORD        Program a word (32-bit) at a specified address           $2
     //TYPEPROGRAM_DOUBLEWORD  Program a double word (64-bit) at a specified address    $3
}
[...]
  flashTypeProgram=TYPEPROGRAM_WORD;
  dataSize=(sizeof dataBuffer) / (sizeof *dataBuffer);
  for (i=0;i<dataSize;i++) {
      dataBuffer[i]=0x1010101;  //0x1010101 puts 1 in each byte of userConfig
  }
  Write_Flash(dataBuffer,flashTypeProgram);

STM32F4发现 - 写入/读取闪存

1 个答案: