Question

L4 系列使用页（或存储体，如果您执行完全擦除）擦除闪存。但是在执行页面擦除后我在写入时遇到了一些问题，我不知道为什么。

只是为了概述目标，我存储了从 0x08080000 开始的 6 个值（第 256 页）然后我将存储从 0x08080800)（第 257 页）到 0x08085800（第 267 页）的更多值

有一个函数可用于擦除/写入第 256 页的值：

void write_bias_flash(int16_t biases[]) {
    uint16_t *flash_biases = (uint16_t*) (ADDR_FLASH_PAGE_256);
    static FLASH_EraseInitTypeDef EraseInitStruct;
    Address = ADDR_FLASH_PAGE_256;

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
    EraseInitStruct.Page = 0;
    EraseInitStruct.Banks = FLASH_BANK_2;
    EraseInitStruct.NbPages = 1;

    HAL_FLASH_Unlock();
    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing biases at address: 0x%x", Address);
    }
    for (int8_t bias = 0; bias < 6; bias++) {
         if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD,
                Address + bias * sizeof(uint64_t), (uint64_t) biases[bias])
                != HAL_OK)
            serprintf("Error writing biases to flash.");
     }
    HAL_FLASH_Lock();
    serprintf("Biases stored in flash.");
}

这项工作很棒。没有问题。

我有两个函数用于擦除/写入从 0x08080800 开始的数据）（第 257 页）：

void Erase_TM_Flash() {
    uint8_t *flash = (uint8_t*) (FLASH_USER_START_ADDR);
    uint8_t *b = (uint16_t*) (ADDR_FLASH_PAGE_256);
    static FLASH_EraseInitTypeDef EraseInitStruct;
    Address = FLASH_USER_START_ADDR;

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
    EraseInitStruct.Page = 1;
    EraseInitStruct.NbPages = 255;
    EraseInitStruct.Banks = FLASH_BANK_2;

    HAL_FLASH_Unlock();
    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing biases at address: 0x%x", Address);
    }

    HAL_FLASH_Lock();

    for (uint16_t i = 0; i< (FLASH_ROW_SIZE * sizeof(uint64_t))*255; i++)
    {
        if ((uint16_t) *(flash+i) != 255) {
            serprintf("0x%x is not erased (%i)", flash+i, (uint16_t) *(flash+i));
        }

    }

}
void Save_to_Flash(uint32_t *data) {

    uint32_t src_addr = (uint32_t) data;
    Erase_TM_Flash();
    serprintf("Saving to flash...");
    HAL_StatusTypeDef HAL_STATUS;

    HAL_FLASH_Unlock();
    Address = FLASH_USER_START_ADDR;
    while (Address < (FLASH_USER_END_ADDR - (FLASH_ROW_SIZE * sizeof(uint64_t)))) {
        HAL_STATUS = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FAST, Address, (uint64_t) src_addr);
        if (HAL_STATUS == HAL_OK) {
          Address = Addres+ (FLASH_ROW_SIZE * sizeof(uint64_t));
            src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
            } else {
                serprintf("Error writing flash at address 0x%x. (%i)", Address, HAL_STATUS);
                Address = Address + (FLASH_ROW_SIZE * sizeof(uint64_t));
                src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
            }
    }
    HAL_FLASH_Lock();
    serprintf("Done");
    }

擦除工作正常。我验证调试器中的值（以及检查未擦除页面的代码）。但是当保存发生时：

Error writing flash at address 0x8080800. (1)
Error writing flash at address 0x8080900. (1)
Error writing flash at address 0x8080a00. (1)
Error writing flash at address 0x8080b00. (1)

依此类推，直到所有剩余页面。

但是，如果我擦除整个闪存：

void Erase_Flash() {
    serprintf("Erasing flash...");
    HAL_FLASH_Unlock();
    /* Clear OPTVERR bit set on virgin samples */
    __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_MASSERASE;
    EraseInitStruct.Banks = FLASH_BANK_2;

    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing flash.");
    }
    HAL_FLASH_Lock();
    serprintf("Done.");
}

然后写作就像一个魅力。 HAL_STATUS = 1，根据我找到的代码是 HAL_ERROR = 0x01U，这并不完全有用。

我不确定其中有什么区别，但我希望对我的擦除进行另一组观察可能会发现问题。

谢谢！

Answer 1

此问题似乎与 flash 快速编程有关，并非所有 STM32 型号都提供此功能。

根据Reference Manual (RM0351)，在使用快速编程之前必须批量擦除闪存。否则会发生编程序列错误，PGSERR 寄存器中的 FLASH_SR 位将被设置。请参阅快速编程/编程错误和3.7.5 Flash状态寄存器（FLASH_SR）部分中的3.3.7 Flash主存储器编程序列 在 Bit 7 PGSERR 下。

RM0351 Rev 9，3.3.7 闪存主存储器编程序列，第 106 页：

Fast programming
(...)
1. Perform a mass erase of the bank to program. If not, PGSERR is set.
2. (...)

RM0351 Rev 9，3.3.7 闪存主存储器编程序列，第 107 页：

Programming errors
(...)
PGSERR: Programming Sequence Error
PGSERR is set if one of the following conditions occurs:
– (...)
– In the fast programming sequence: the Mass erase is not performed before setting 
  FSTPG bit.
– (...)

因此，观察到的行为符合预期。 - 因此，您可以替换 Erase_TM_Flash() 函数并使用 Erase_Flash() 首先批量擦除整个闪存组。或者，完全避免使用 Flash 快速编程，而使用 FLASH_Program_DoubleWord() 或 FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, ...)。

相关源文件：stm32l4xx_hal_flash.h、stm32l4xx_hal_flash.c

相关帖子：STM32 - writing and reading flash

stm32L476 - 擦除闪存

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